第三週大學部專討課(9/26)
2022.09.20
演講者：邱顯傑 博士
默克公司 Senior Scientist
演講地點: 材料新館 協勝發講堂(44101)
題目：Atomic layer deposition: technology to extend Moore’s law from bottom up
Everyday each of us generates lots of online data: emails, photos, videos... Moore’s Law is a prediction that has driven with the exponential growth of data for the last 50 years, yet it’s no longer keeping up. The continuous shrinkage in the critical size of transistors reaches its physical limitation when downscaling to < 3nm, also the increase of transistors density of chiplets. By far, although extreme ultraviolet (EUV) lithography has made some significant breakthroughs, it is still facing challenges including alignment precision and high costs for large-volume manufacturing. In the meantime, the introduction of new materials such as 2D nanosheets and 3D integration further complex the conventional top-down manufacturing processes. Hence, bottom-up schemes via controlling etching/deposition processes at atomic scale are believed to be able to address those challenges. Among candidate technologies, atomic layer deposition (ALD) plays the most critical role. In this context, ALD methods are reviewed and categorized to extend Moore’s law and beyond. Beginning with reviewing the fundamentals and history of ALD technology, it spontaneously brings the state-of-the-art applications of ALD in front-end-of-line where transistors are assembled, and back-end-of-line where interconnects wire all transistors. Finally, the most cutting-edge coating technology of area-selective ALD (ASALD) is introduced. Thus, nanopatterning through ASALD exhibits the great potential to overcome/avoid the current technological bottlenecks in top-down semiconductor manufacturing. This presentation also provides a general overview of the current developments in the field of ASALD, discusses the challenge of achieving a high selectivity, and provides a vision for how ASALD processes can be improved.
默克公司 Senior Scientist
演講地點: 材料新館 協勝發講堂(44101)
題目：Atomic layer deposition: technology to extend Moore’s law from bottom up
Everyday each of us generates lots of online data: emails, photos, videos... Moore’s Law is a prediction that has driven with the exponential growth of data for the last 50 years, yet it’s no longer keeping up. The continuous shrinkage in the critical size of transistors reaches its physical limitation when downscaling to < 3nm, also the increase of transistors density of chiplets. By far, although extreme ultraviolet (EUV) lithography has made some significant breakthroughs, it is still facing challenges including alignment precision and high costs for large-volume manufacturing. In the meantime, the introduction of new materials such as 2D nanosheets and 3D integration further complex the conventional top-down manufacturing processes. Hence, bottom-up schemes via controlling etching/deposition processes at atomic scale are believed to be able to address those challenges. Among candidate technologies, atomic layer deposition (ALD) plays the most critical role. In this context, ALD methods are reviewed and categorized to extend Moore’s law and beyond. Beginning with reviewing the fundamentals and history of ALD technology, it spontaneously brings the state-of-the-art applications of ALD in front-end-of-line where transistors are assembled, and back-end-of-line where interconnects wire all transistors. Finally, the most cutting-edge coating technology of area-selective ALD (ASALD) is introduced. Thus, nanopatterning through ASALD exhibits the great potential to overcome/avoid the current technological bottlenecks in top-down semiconductor manufacturing. This presentation also provides a general overview of the current developments in the field of ASALD, discusses the challenge of achieving a high selectivity, and provides a vision for how ASALD processes can be improved.