112學年材料所-第九週 專題研討課程 演講公告 (113年4月18日)
2024.04.15
112學年下學期專題討論公告
題目:
利用侷限促進反應來實現高品質二維材料生長
High quality 2D Material CVD Growth through confinement enhanced reactivity
演講者: 謝雅萍 Ya-Ping Hsieh
現職: 中央研究院 原子與分子科學研究所 研究員
時間: 113年4月18日(四) 下午15:10~17:00
地點: 成功大學成功校區三系館 鋼構區(3F)共同教室A1302演講廳
演講摘要:
2D materials are considered promising components for future electronics if current challenges in the scale and quality of their synthesis can be resolved. I will present our recent advances in 2D materials growth by chemical vapor deposition (CVD) that are enabled by confined reaction conditions. I will demonstrate the effect of confinement, facilitated by functional caps, in promoting the growth of various 2D materials (Graphene, TMDCs and transition metal nitride (TMN)). For graphene synthesis, confinement offers an enhanced interaction of the precursor with the catalyst surface, thereby enhancing reaction efficiency. Additionally, the reduced spatial requirements enable the implementation of stacking methods, permitting multi-wafer-scale and high-quality graphene growth[1]. In the case of transition metal dichalcogenide (TMDC) growth, such as WS2, confinement with a mediator cap stabilizes the flux of precursors in the presence of variations, leading to a continuous growth process that yields 2D materials with superior quality compared to other synthesis techniques [2]. Finally, I will share our recent breakthrough in the synthesis of transition metal nitrides (e.g., W5N6) through the utilization of a catalytic cap, which reduces the energy barrier for precursor decomposition which helps realize a novel type of semimetal with exciting mechanical and electrochemical properties.[3-4] Our work highlights the pivotal role of confinement-enhanced reactivity in achieving high-quality 2D materials toward future applications.
References
1. H. T. Chin et al, 2D Materials 8 (2021) 035016.
2. Yu-Siang Chen et al. npj 2D Materials and Applications 6 (2022) 54.
3. H. T. Chin et al, ACS Applied Materials & Interfaces 16 (2024) 1705.
4. H. T. Chin et al, Nano Letters 24(2024) 67.
歡迎各位撥冗參加!!
題目:
利用侷限促進反應來實現高品質二維材料生長
High quality 2D Material CVD Growth through confinement enhanced reactivity
演講者: 謝雅萍 Ya-Ping Hsieh
現職: 中央研究院 原子與分子科學研究所 研究員
時間: 113年4月18日(四) 下午15:10~17:00
地點: 成功大學成功校區三系館 鋼構區(3F)共同教室A1302演講廳
演講摘要:
2D materials are considered promising components for future electronics if current challenges in the scale and quality of their synthesis can be resolved. I will present our recent advances in 2D materials growth by chemical vapor deposition (CVD) that are enabled by confined reaction conditions. I will demonstrate the effect of confinement, facilitated by functional caps, in promoting the growth of various 2D materials (Graphene, TMDCs and transition metal nitride (TMN)). For graphene synthesis, confinement offers an enhanced interaction of the precursor with the catalyst surface, thereby enhancing reaction efficiency. Additionally, the reduced spatial requirements enable the implementation of stacking methods, permitting multi-wafer-scale and high-quality graphene growth[1]. In the case of transition metal dichalcogenide (TMDC) growth, such as WS2, confinement with a mediator cap stabilizes the flux of precursors in the presence of variations, leading to a continuous growth process that yields 2D materials with superior quality compared to other synthesis techniques [2]. Finally, I will share our recent breakthrough in the synthesis of transition metal nitrides (e.g., W5N6) through the utilization of a catalytic cap, which reduces the energy barrier for precursor decomposition which helps realize a novel type of semimetal with exciting mechanical and electrochemical properties.[3-4] Our work highlights the pivotal role of confinement-enhanced reactivity in achieving high-quality 2D materials toward future applications.
References
1. H. T. Chin et al, 2D Materials 8 (2021) 035016.
2. Yu-Siang Chen et al. npj 2D Materials and Applications 6 (2022) 54.
3. H. T. Chin et al, ACS Applied Materials & Interfaces 16 (2024) 1705.
4. H. T. Chin et al, Nano Letters 24(2024) 67.
歡迎各位撥冗參加!!