張高碩教授
- 聯絡電話： (06) 275-7575 ext. 62922
- 電子信箱：kschang@mail.ncku.edu.tw
- 實驗室：CTRL
- 研究專長：高效能材料分析法、電子金屬、陶瓷薄膜材料、電子元件
- 個人網站：網站連結
- 學歷：馬里蘭州立大學 材料工程系 博士(美國 )
- 經歷：馬里蘭州立大學材料工程系博士(美國)
- 學術成大：
期刊論文
- K.-S. Chang*;W.-C. Lu;C.-Y. Wu;H.-C. Feng,"High-throughput identification of higher-k dielectrics from an amorphous N2-doped HfO2-TiO2 library",Journal of Alloys and Compounds; Journal of Alloys and Compounds(SCI2014)[link]
- W.-C. Lu;H.-D. Nguyen;C.-Y. Wu;K.-S. Chang*;M. Yoshimura,"Modulation of Physical And Photocatalytic Properties of (Cr,N) Codoped TiO2 Nanorods Using Soft Solution Processing",J. of Applied Physics 115, 144305 (2014).;(SCI2014)[link]
- K.-S. Chang*;H.-C. Feng;C.-L. Chen;W.-C. Lu,,"Substantial Enhancement of Dielectric Properties of Amorphous Y2O3-TiO2 Composition Spreads Through N2 Doping by Using Combinatorial Sputtering",IEEE Trans. on Electron Devices 61, 2125 (2014).;(SCI2014)[link]
- K.-S. Chang;M. L. Green;H. M. Lane;I. Levin;S. De Gendt,,"Scripta Materialia 68, 333 (2013).",Combinatorial Screening of Work Functions in the Ta-C-N/HfO2/Si Advanced Gate Stacks;vol : 68, no : (SCI2013)[link]
- K.-S. Chang;M. L. Green;P. K. Schenck;I. Levin;E. Venkatasubramanian,,"IEEE Trans. Electron Devices 59, 3212 (2012).",High-throughput Screening of Amorphous Y2O3-TiO2 Higher-k Gate Dielectric Layers;vol : 59, no : (SCI2012)[link]
- J. L. Klamo;P. K. Schenck;P.G. Burke;K.-S. Chang;M. L. Green,"Manipulation of The Crystallinity Boundary of Pulsed Laser Deposited High-k HfO2-TiO2-Y2O3 Combinatorial Thin Films",J. Appl. Phys.;(SCI2010)[link]
- K.-S. Chang;M. L. Green;I. Levin;J. R. Hattrick-Simpers;C. Jaye;D. A. Fischer;I. Takeuchi;I. Takeuchi,"Physical and Chemical Characterization of Combinatorial Metal Gate Electrode Ta-C-N Library Film",Appl. Phys. Lett. 96;(SCI2010)[link]
- M. Otani;E. L. Thomas;W. Wong-Ng;P. K. Schenck;K.-S. Chang;N. D. Lowhorn;M. L. Green;H. Ohguchi,"A High-Throughput Screening System for Thermoelectric Material Exploration Based on a Combinatorial Film Approach",Japanese J. of Applied Physics;(SCI & EI2009)[link]
- K.-S. Chang;M. L. Green;J. Hattrick-Simpers;I. Takeuchi;J. Suehle;O. Celik;S. De Gendt,"Determination of Work Functions in the Ta1-xAlxNy/HfO2 Advanced Gate Stack Using Combinatorial Methodology",IEEE Trans. Electron Devices;(SCI2008)[link]
- K. Ohmori;P. Ahmet;M. Yoshitake;T. Chikyow;K. Shiraishi;K. Yamabe;K. Watanabe;Y. Akasaka;Y. Nara;K.-S. Chang;M. L. Green;K. Yamada,"Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures",J. Appl. Phys.;(SCI2007)[link]
- K.-S. Chang;M. Green;J. Suehle;E. Vogel;H. Xiong;J. Hattric-Simpers;I. Takeuchi;O. Famodu;K. Ohmori;P. Ahmet;T. Chikyow;P. Majhi;B.-H. Lee;M. Gardner,"Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO2 for the advanced gate stack",Appl. Phys. Lett.;(SCI2006)[link]
研討會論文
- M. L. Green;P. K. Schenck;K.-S. Chang;J. L. Ruglovsky;M. Vaudin,"“Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research study",Microelectronic Engineering;(2009)[link]
- K.-S. Chang;M. L. Green;J. Suehle;J. Hattrick-Simpers;I. Takeuchi;K. Ohmori;T. Chikyow;S. De Gendt;P. Majhi,"Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack",ECS Transactions;(2008)[link]
- K.-S. Chang;N. D. Bassim;P. K. , Schenck;J. Suehle;I. Takeuchi;M. L. Green,"Combinatorial Methodologies Applied to the Advanced CMOS Gate Stack and Channel",American Institute of Physics (AIP) Conference Proceedings;(2007)[link]
- M. L. Green;K.-S. Chang;S De Gendt;T. Schram;J. Hattrick-Simpers,"Application of Combinatorial Methodologies for Work Function Engineering of Metal Gate/High-k Advanced Gate Stacks",Microelectronic Eng.;(2007)[link]
- M. L. Green;K.-S. Chang;I. Takeuchi;T. Chikyow,"A Combinatorial Study of Metal Gate/HfO2 MOSCAPS",ECS Transaction;(2006)[link]